EPCOS 2016
will be held on 4-6 September 2016
at Trinity College,
Cambridge University, Cambridge, UK

TIME TABLE 05-Sep-16 Affiliation Paper Title
8:30-9:00 am REGISTRATION
9:00-9:05 am OPENING REMARKS
9:05-9:10 am GREETINGS: From Local Committee
Ovshinsky Leactureship award 2016
9:10-9:35 am Kenkichi Tanioka Medical Imaging Consortium, Japan HARP: A Highly Sensitive Pickup Tube Target Using Avalanche Multiplication in Amorphous Selenium
9:35-10:00 am Safa Kasap Universisty of Saskatchewan, Canada Doped Chalcogenide Glasses in Digital Direct Conversion Flat Panel X-Ray Imagers for Mammography: A Review
10:00-10:30 am COFFEE BREAK
SESSION-1 New Applications & Optics
10:30-10:55 am Wolfram H. P. Pernice (invited) University of Münster, Germany Reconfigurable nanophotonic devices using phase-change materials
10:55-11:20 am Muneaki Hase (invited) Tsukuba University, Japan Femtosecond lattice and spin dynamics in topological phase-change materials
11:20-11:45 am Simon Wall (invited) CFO— Barcelona, Spain Ultrafast control of resonant bonding state in PCMs
11:45-12:00 pm David Wright University of Exeter, UK Phase-change meta-photonics
12:00-12:15 pm Matthias Stegmaier University of Münster, Germany Integrated phase-change photonics for all-optical processing
12:15-12:20 pm GROUP PHOTO
12:20-1:30 pm LUNCH BREAK
1:30-1:55 pm Guy Wicker (invited) Ovshinsky Innovation, USA A review of recent phase change memory developments
1:55-2:20 pm Fabio Pellizzer (invited) Micron, Italy Phase-Change Materials – Performances and Applications from NOR Replacement to Storage Class Memory
2:20-2:45 pm Abu Sebastian (invited) IBM Research—Zurich, Switzerland Multi-level storage in phase change memory devices
2:45-3:00 pm Rong Zhao Singapore University of Technology & Design (SUTD), Singapore A Chalcogenide-based High Performance Selector
3:00-3:15 pm Carlo Jacoboni Università di Modena, Italy Time- and space-dependent electric response of Ovonic devices
3:15-3:30 pm Yegang Lu Ningbo University, China Multilayer phase-change film for multilevel storage
PC-01 Yat-Yin Au University of Exeter, UK An optoelectronic test station for novel phase-change device characterisation and development
PC-02 Hsiang-Chu Wang National Taiwan University,Taiwan Visible Light Scattering by Ge2Sb2Te5 Dots
PC-03 Ryota Akimoto Keio University, Japan Optical response of GeSbTe/GeCuTe multi-layered thin film and its application to pulse skew measurement
PC-04 Yuya Kihara Keio University, Japan Functional optical memory based on the modification of light confinement in a microcavity with a phase change material
PC-05 Cheng Hung Chu Research Center for Applied Sciences, Academia Sinica,Taiwan. Tunable metasurface based on phase-change material
PC-06 Weiling Dong Singapore University of Technology and Design Wideband visible absorbers by Ge2Sb2Te5 and Al nanogratings
PC-07 Yuki Aihara University of Tsukuba, Japan Observation of ultrafast magneto-optical response in interfacial phase change memory
PC-08 Ruomeng Huang University of Southampton, UK Electrodeposition of Functional Metal Chalcogenide: GeSbTe Phase Change and Resistive Switching Memory
PC-09 Hasan Hayat University of Exeter, UK Size Scaling in Phase Change Memory Cells: From Traditional to Emerging Device Structures
PC-10 Al-Shahrablee Ammar Adel Hasan University of Exeter,UK Modeling a three-terminal, phase-change based logic device
PC-11 Noriyuki Miyata National Institute of Advanced Industrial Science and Technology (AIST), Japan Electrical Switching of GeTe-Sb2Te3 Superlattice iPCM under Bipolar Voltage Sweep
PC-12 Azzam S. Younus University of Exeter, UK The effect of the temperature dependence of viscosity on modelling crystallization dynamics in phase-change materials
PC-13 Huanglong Li Tsinghua University, China Multiple valence alternation pairs lead to Ge-Ge chain with negative-U characteristics and gap states in a-GeTe
PC-14 Paul A. Vermeulen University of Groningen, The Netherlands Unravelling the domain structures in GeTe and LaAlO3
PC-15 Philipp M. Konze University, Landoltweg, Germany Distribution of defect energiesin metastable crystalline phase-change materials: a statistical investigation
PC-16 Xiaoming Yu University of Cambridge, UK Nature of defects in amorphous GeSbTe phase change materials
PC-17 Ider Ronneberger RWTH Aachen, Germany Computational Study of Liquid and Amorphous Sb
PC-18 Hiroki Shirakawa Nagoya University, Japan First-principles study on superlattice Ge deficient GexTe/Sb2Te3
PC-19 Xue-Peng Wang Jilin University, China Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe
PC-20 Jamo Momand University of Groningen, The Netherlands Quantitative characterization of GeTe-Sb2Te3 superlattices
PC-21 Eugenio Zallo Paul-Drude-Institut für Festkörperelektronik, Germany Effect of substrate miscut on GST vacancy ordering
PC-22 Suyoun Lee Korea Institute of Science and Technolog A study on the interface between an electrode and anamorphous chalcogenide: Effect of the contact on the characteristics of the Ovonic Threshold Switch (OTS)
PC-23 Tobias Schafer RWTH Aachen University, Germany Tuning of Mobility and Carrier Concentration in Crystalline Phase-Change Materials
PC-24 Karthick Perumala DESY, Germany XRD studies on optically recrystallized epitaxial GST films on Si(111)
PC-25 Jitendra K. Behera Singapore University of Technology and Design, Singapore Laser switching of nanostructured phase change materials
PC-26 Stefania Priviter IMM-CNR, Italy Stability of GeSb2Te4 crystalline phases under ion irradiation
PC-27 Pavan Nukala University of Pennsylvania, Philadelphia, U.S.A. Power efficient crystal-amorphous switching in GeTe via defect engineering
PC-28 David. A. Drabold Ohio University & University of Southern Mississippi, USA Computational Design of Amorphous Materials
PC-29 Bin Chen University of Groningen, The Netherlands Crystallization of Ge2Sb2Te5 nanoparticles
PC-30 Satoshi Shindo Tohoku University, Japan Resistance contrast of GeCu2Te3 phase change memory cell
PC-31 Do Bang Toyota Technological Institute, Japan Magnetoresistance in [(GeTe)2/(Sb2Te3)1]n Superlattices
PC-32 Shogo Hatayama Tohoku University, Japan The doping effect of V, Cr, Ni and Cu on the crystallization behavior of GeTe amorphous film
PC-33 Sanzha Dyussembayev al-Farabi Kazakh National University, Kazakhstan Influence of bismuth modification on Ge2Sb2Te5 nanoscale films
PC-34 Philippe Kowalczyk CEA-Leti, 2 Université Grenoble, France XRD and EXAFS structural investigations of sputtered GeTe/Sb2Te3 superlattices
PC-35 Ju-Young Cho RWTH Aachen University, Germany Understanding the amorphous structure of a prototype phase-change material
PC-36 Henning Hollermann RWTH Aachen University, Germany Structural properties of chalcogenide superlattices and textured GeSbTe
PC-37 Rosie A Cobley University of Exeter, UK A self-resetting spiking phase-change neuron
SESSION-3 Theory & Modeling & Simulation
5:00-5:25 pm Junji Tominaga (invited) National Institute of Advanced Industrial Science and Technology (AIST), Japan Design rule for interfacial phase change memory and its functionalities
5:25-5:50 pm Marco Bernasconi (invited) University of Milan - Bicocca, Italy Atomistic simulations of thermal transport in phase change materials
5:50-6:15 pm Matthias Wuttig (invited) RWTH Aachen Novel phase change materials by design: The mystery of resonance bonding
6:15-6:30 pm Xiaoming Yu University of Cambridge, UK Atomic Layering, Intermixing and Switching Mechanism in GeSbTe based Chalcogenide Superlattices
6:30-6:45 pm Robert E Simpson Singapore University of Technology and Design, Singapore Genetic algorithm inspired design of Ge2Sb2Te5 structures
6:45-7:00 pm Peter C. Schmitz RWTH Aachen, Germany Crystalline GeSbTe: A topological Dirac semimetal ?
8:30-9:00 am REGISTRATION
SESSION-4 Structure & Analysis
9:00-9:25 am Bart Kooi (invited) Groningen University, The Netherlands Quantitative characterization of GeTe-Sb2Te3 superlattices and Ge2Sb2Te5 nanoparticles with narrow size distributions
9:25-9:50 am Marco Malvestuto (invited) ELETTRA, Italy Local environment and optical response of nanoscaled GeTe-Sb2Te3 superlattices
9:50-10:15 am Tetsu Ichitsubo (invited) Kyoto University, Japan Initial dynamics immediately following femtosecond-laser irradiation in phase-change materials
10:15-10:30 am Jos E. Boschker Paul-Drude-Institut für Festkörperelektronik, Germany Electrical characterization of phase change memory cells containing superlattices grown by molecular beam epitaxy
10:30-10:45 am Andriy Lotnyk Leibniz Institute of Surface Modification IOM, Germany Formation and direct imaging of heterogeneous vacancy structures in cubic Ge2Sb2Te5 crystal lattices
10:45-11:15 am COFFEE BREAK
SESSION-5 Materials
11:15-11:40 am Chong Tow Chong (invited) Singapore University of Technology and Design, Singapore Phase-Change Materials: A Superlatticelike Architecturing, Incubation-Driven Programming Perspective
11:40-12:05 Martin Salinga (invited) RWTH Aachen University, Germany Impact of defect occupation on current-voltage characteristics in amorphous Ge2Sb2Te5
12:05-12:30 pm Feng Rao (invited) Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, China. Metastable face-centered cubic Sb2Te3 phase for high-speed and low-energy phase transition
12:30-12:45 pm Richarj Mondal University of Tsukuba, Japan Unravelling the quantum phase transition in Sb2Te3 topological insulator investigated using ultrafast time-resolved Kerr spectroscopy
12:45- 1:00 pm Yuta Saito National Institute of Advanced Industrial Science and Technology (AIST), Japan Growth of GeTe/Bi2Te3 chalcogenide superlattice by sputtering
1:00-2:00 pm LUNCH BREAK
SESSION-6 PRAM-2 & Materials-2
2:00-2:25pm Alin Velea (invited) IMEC, Kapeldreef 75, 3001, Leuven, Belgium The interplay between material and device properties in Ge-Te and Si-Te binary systems as a guide for material selection in selector applications
2:25-2:50 pm Suyoun Lee (invited) Korea Institute of Science and Technology,Korea Quantum transport properties of Bi2Te3 topological insulator films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)
2:50-3:15 pm Nicola Ciocchini (invited) Politecnico di Milano (Italy) Bipolar switching operation in phase change memory devices for high temperature retention
3:15-3:30 pm Desmond Loke Singapore University of Technology and Design, Singapore A Clathrate-Based Phase-Change Material for Nanometer-Size, Energy-Efficient Internet-of-Things (IoT) Devices
3:30-4:00 pm COFFEE BREAK
SESSION-7 (New) Neuro & Others
4:00-4:25pm Luping Shi (invited) Tsinghua Univ., Beijing, China Application of phase change materials on vision for brain inspired computing
4:25-4:40 pm Robert Morel Univ. Grenoble, France Optical phase transition in nanometer-size GST clusters
4:40-4:55 pm Mathias Schumacher RWTH Aachen, Germany Combined Methods Study of Liquid Phase-Change Materials
4:55 -5:10 pm Shivendra Kumar Pandey Indian Institute of Technology, India Investigation on In3SbTe2 phase change material for multi-bit data storage applications
5:10-5:25 pm Giuseppe D’Arrigo CNR-IMM, Italy Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5 layers.
5:25-5:35 pm SHORT BREAK
5:35-5:40:pm CLOSING SESSION
5:40-5:50 pm AWARD CEREMONY